Description
G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.
Applications
- Telecommunications - Server and telecom power supplies
- Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs)
- Consumer and computing - ATX power supplies
- Industrial - Welding - Battery chargers
- Renewable energy - Solar (PV inverters)
- Switch mode power suppliers (SMPS)
- Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge
Features
- High-speed switching Low input capacitance (Ciss)
- Low on-resistance
- No secondary breakdown
- Low driving power
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Specification
| Model | G33N50EF |
| Type | MOSFET |
| Package | TO-247AC |
| Continuous drain current (Id) | 21A |
| Pulsed drain current (Id pulse) | 100A |
| Drain-Source Breakdown Voltage | 600V |
| Max. power dissipation (Pd) | 278W |
| Storage temperature range | -55~150 (degree C) |
| Country of Origin | China |