G20N60 N- Channel IGBT

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G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor's low on-state conduction loss with a MOSFET's high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT.


  • Highly reliable
  • 40A, 600V at TC= 25oC
  • Short Circuit Rated
  • Low Conduction Loss
  • It has high capability to reduce power losses

Model G20N60 
Type N-Channel IGBT
Peak Repetitive Reverse Voltage 600V
Package TO-247
Brand name Fairchild
Typical fall time 140nS
Maximum Power Dissipation 165W
Operating and Storage Temperature Range -65 to 175 centigrade
Country of Origin China




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