Fuji Electric 1MBH75D-060S 600V/75A Molded IGBT

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1MBH75D-060S is a 600V, 75A IGBT Molded Package. It is through hole(THD) active components with three terminals: Gate, Collector and Emitter. In a single device, the IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch. In contrast to BJT, IGBT requires only a small voltage to maintain conduction in the device. The IGBT is a unidirectional device, which means it can only turn on in one direction.



  • Small molded package
  • Low power loss
  • Soft switching with low switching surge and noise
  • High reliability, high ruggedness.
  • Comprehensive line-up


  • AC-DC servo drive amplifier
  • Uninterrupted power supply
 Model 1MBH75D-060S
 Brand Fuji Electric
 Collector-Emitter Voltage (VCES) 600V
 Gate-Emitter Voltage (VGES) ±30V
 IGBT Max Power Dissipation (Pc) 310W
 FWD Max Power Dissipation (Pc) 180W
 Operating Temperature (TJ) +150°C
 Storage Temperature (TSTG) -40~+150°C
 Mounting Type Through Hole
Country of Origin China

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