Description
1MBH75D-060S is a 600V, 75A IGBT Molded Package. It is through hole(THD) active components with three terminals: Gate, Collector and Emitter. In a single device, the IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch. In contrast to BJT, IGBT requires only a small voltage to maintain conduction in the device. The IGBT is a unidirectional device, which means it can only turn on in one direction.
Features
- Small molded package
- Low power loss
- Soft switching with low switching surge and noise
- High reliability, high ruggedness.
- Comprehensive line-up
Applications
- AC-DC servo drive amplifier
- Uninterrupted power supply
Specifications
| Model | 1MBH75D-060S |
| Brand | Fuji Electric |
| Collector-Emitter Voltage (VCES) | 600V |
| Gate-Emitter Voltage (VGES) | ±30V |
| IGBT Max Power Dissipation (Pc) | 310W |
| FWD Max Power Dissipation (Pc) | 180W |
| Operating Temperature (TJ) | +150°C |
| Storage Temperature (TSTG) | -40~+150°C |
| Mounting Type | Through Hole |
| Country of Origin | China |