Description
The FS75R12KE3G is an IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, offering high-performance switching capabilities for various power electronics applications. With a voltage rating of 1200V and a current rating of 75A, it's designed for efficient and reliable power control in industrial and automotive systems, among others.
Specifications:
- Voltage Rating: 1200V
- Current Rating: 75A
- Maximum Operating Temperature: C to C
- Package Type: IGBT Module
- Features: High-performance switching, suitable for industrial and automotive applications