Description
This N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These gadgets are appropriate for applications requiring variable switching power, DC motor control, and switched-mode power sources.
Features:
- 70 A, 100 V, RDS(on) = 23 mΩ (Max) @VGS = 10 V, ID = 35 A
- Improved dv/dt Capability
- Fast Switching Speed
- 100% Avalanche Tested
- It has a small size
- It's not too costly
- Highly efficient
Specifications:
| Model | FQA70N10 |
| Type | MOSFET |
| Package | TO-3PN |
| Brand | ONSEMI |
| Drain source Voltage | 100V |
| Drain current | 70A |
| Total power dissipation | 214W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |