Description
The FNB41560B2 is a high-power insulated gate bipolar transistor (IGBT) designed for applications requiring efficient switching and power control. With a voltage rating of 600V and a current rating of 415A, it offers robust performance for industrial and automotive applications, making it a reliable choice for power electronics systems.
Specifications:
- Voltage Rating: 600V
- Current Rating: 415A
- Package Type: TO-247
- Maximum Operating Temperature: typically up to 150°C
- Gate-Emitter Voltage (VGE): typically around ±20V
- Collector-Emitter Saturation Voltage (VCEsat): typically around 1.7V at 25°C, 2.3V at 125°C
- On-State Voltage (VCE(on)): typically around 1.4V at 25°C, 1.9V at 125°C
- Thermal Resistance: typically around 0.42°C/W junction-to-case
- Switching Frequency: depends on application and circuit design, typically from several kHz to MHz.