Description
FDA59N30 is an N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high efficiency switching mode power supply.
Features
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59A, 300V, RDS(on)= 0.056Ω@VGS= 10 V
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Low gate charge ( typical 77 n C)
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Low Cr s s( typical 80 pF)
- Fast switching
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Improved dv/dT capability
Specification
| Model | FDA59N30 |
| Type | MOSFET |
| Package | TO-3P |
| Brand | ONSEMI |
| Drain Current | 236A |
| Repetitive avalanche energy | 50mJ |
| Total power dissipation | 500W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |