Description
The SuperFET® II MOSFET is a new high voltage super-junction (SJ) MOSFET family from Fairchild Semiconductor that uses charge balance technology for exceptional low on-resistance and lower gate charge performance. This technology minimises conduction loss while switching performance, dv/dt rate and avalanche energy are all improved. As a result, SuperFET II MOSFET is ideal for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. The optimised body diode reverse recovery performance of SuperFETII FRFET® MOSFET allows for removing additional components and increasing system reliability.
Features
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650 V @ TJ= 150°C
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Typ. RDS(on)= 65 mΩ
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100% Avalanche rated
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Low Effective Output Capacitance (Typ. Coss(eff.)= 441 pF)
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Ultra Low Gate Charge (Typ. Qg= 165 nC)
Specification
| Model | FCH072N60F |
| Type | MOSFET |
| Package | TO-247 |
| Voltage | 600V |
| Current | 72A |
| Drain current | 52A |
| Total power dissipation | 481W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |