Description
A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device. SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET II MOSFETs are ideal for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of the SuperFET II MOSFET can eliminate an additional component and improve system reliability.
Features
- 100% Avalanche Tested
- RoHS Compliant
Specifications
| Model | FCH041N60 |
| Brand | Fairchild |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) | 76A (at Tc=25°C) |
| RDS(on) | 36 mΩ (at VGS = 10 V, ID = 38 A) |
| Ultra low gate charge Qg(tot) | 277 nC (at VGS = 10V, ID = 38 A) |
| Low Effective Output Capacitance (Typical Coss(eff.) | 748pF |
| Package | TO-247 |
| Quantity | 100 |
| Country of Origin | China |