Description
The ESM3045DV is an Insulated Gate Bipolar Transistor (IGBT) with a diode. It is designed for high efficiency and fast switching in power electronics. It combines the high-speed switching of a MOSFET with the low on-state conduction losses of a bipolar transistor, making it ideal for applications like inverters and motor drives.
Specifications:
- Collector-Emitter Voltage (V_CE): 600V
- Collector Current (I_C): 45A
- Gate-Emitter Voltage (V_GE): ±20V
- Collector Dissipation (P_C): 190W
- Junction Temperature (T_J): -55°C to 150°C
- Reverse Recovery Time (t_rr): Fast recovery diode
- Threshold Voltage (V_GE(th)): 4.5V to 6.5V
- Total Gate Charge (Q_g): 220nC
- Package Type: TO-247
- Switching Frequency: High-frequency operations suitable