Description
The EL817 device consist of the infrared emitting diode, optically coupled to a phototransistor detector. Its packaged in a 4-pin DIP package and is available in wide-lead spacing. 2 pins are for input and the other two are for output.
Pinout
| 1 | Anode |
| 2 | Cathode |
| 3 | Emitter |
| 4 | Collector |
Applications
- Programmable controllers
- System appliances, measuring instruments
- Telecommunication equipment
- Home appliances, such as fan heaters, etc.
- Signal transmission between circuits of different potentials and impedance
Features
- Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V)
- High isolation voltage between input and output (Viso=5000 V RMS)
- Creepage distance >7.62 mm
- Operating temperature up to +110°C
Specifications
| Input-Forward current | 60mA |
| Input-Reverse voltage | 6V |
| Input-Forward voltage | 1.2 - 1.4 V |
| Output-Collector-Emitter voltage | 35V |
| Output-Emitter-Collector voltage | 6V |
| Output-Collector current | 50mA |
| Operating temperature | -55 ~ +110°C |
| Storage temperature | -55 ~ +125°C |
| Total power dissipation | 200 mW |
| Country of Origin | China |