Description
The E47N50 is a high-power Insulated Gate Bipolar Transistor (IGBT) with a built-in diode. It is designed for fast switching applications and offers high efficiency. This IGBT features a voltage rating of 500V and a current rating of 47A, making it suitable for use in power electronics and motor drives.
Specifications:
- Collector-Emitter Voltage (Vce): 500V
- Collector Current (Ic): 47A
- Gate-Emitter Voltage (Vge): ±20V
- Collector Dissipation (Pc): 250W
- Maximum Junction Temperature (Tj): 150°C
- Threshold Voltage (Vge(th)): 4.5V - 7.5V
- Collector-Emitter Saturation Voltage (Vce(sat)): 2.7V at Ic = 47A
- Rise Time (tr): 40ns
- Fall Time (tf): 100ns
- Package Type: TO-247