Doingter DOD70P06 60V 70A P-Channel MOSFET

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Description

This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications.
Features
1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V
2) Low gate charge
3) Green device available
4) Advanced high cell density trench technology for ultra RDS(ON)
5) Excellent package for good heat dissipation
Specification
Model DOD70P06
Brand Doingter
Drain-Source Voltage (VDS) 60V
Gate-Source Voltage (VGS) ±20V
Continuous Drain Current  70A
Pulsed Drain Current 200A
Operating Temperature -55°C~175°C
Package TO-252
Quantity 100
Country of Origin China

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