Description
The DFA100BA160 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features a voltage rating of 1600V and a current rating of 100A, making it suitable for use in various power electronic systems such as motor drives, inverters, and industrial applications requiring high switching capabilities and efficiency.
Specifications:
- Voltage Rating: 1600V
- Current Rating: 100A
- Package Type: TO-3P
- Maximum Operating Temperature: 150°C
- Gate-Emitter Voltage (VGE): ±20V
- Collector-Emitter Saturation Voltage: 2.4V @ 100A
- Gate Charge: 210nC
- Reverse Recovery Time: 190ns
- Diode Continuous Forward Current: 100A
- Diode Maximum Reverse Recovery Time: 400ns