Description
The BYV541V200 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. It is designed for high-voltage and high-speed switching applications. With a voltage rating of 1200V and a current rating of 200A, it offers efficient power control and is suitable for various industrial and automotive applications.
Specifications:
- Voltage Rating: 1200V
- Current Rating: 200A
- Package Type: TO-247
- High-Speed Switching Capability
- Low Collector-Emitter Saturation Voltage
- Suitable for High-Power and High-Frequency Applications
- Integrated Gate-Emitter Protection Diode