Description
The BYT261PIV400 is an IGBT (Insulated Gate Bipolar Transistor) diode with a rated current of 400V and 50A. It's commonly used in power electronics for switching applications due to its high voltage and current handling capabilities. The "PIV" designation likely refers to its peak inverse voltage rating.
Specifications:
- Voltage Rating: 400V (Peak Inverse Voltage, PIV)
- Current Rating: 50A (Continuous current capability)
- Package Type: This can vary based on the manufacturer but is typically a TO-220 or similar package for easy mounting on a heatsink.
- Gate Threshold Voltage: The voltage at which the IGBT starts conducting when the gate signal is applied.
- Forward Voltage Drop: The voltage drop across the diode when it is conducting current.
- Reverse Recovery Time: The time taken for the diode to switch from conducting to non-conducting state when the voltage across it changes polarity.