Description
The BSM10GP120 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It features a voltage rating of 1200V, a current rating of 10A, and is designed for high-power applications such as motor control, renewable energy systems, and industrial automation. Its compact size and robust construction make it suitable for demanding environments.
Specifications:
- Voltage Rating: 1200V
- Current Rating: 10A
- Maximum Collector-Emitter Voltage: 1200V
- Maximum Collector Current: 10A
- Maximum Collector Power Dissipation: 52W
- Operating Temperature: -40°C to +125°C
- Mounting Type: Screw
- Package / Case: Module with SEMITRANS 2 housing
- Features: High efficiency, low saturation voltage, rugged construction
- Applications: Motor control, renewable energy systems, industrial automation