Description
The BSM100GB120DN2K is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power electronics applications. It features a voltage rating of 1200V, a current rating of 100A, and is suitable for use in various industrial and automotive systems requiring efficient power switching and control.
Specifications:
- Voltage Rating: 1200V
- Current Rating: 100A
- Module Type: Half-Bridge
- Configuration: Dual IGBT
- Package: SEMITOP
- Applications: Industrial and automotive power electronics
- Features: High efficiency, low power loss, and reliable performance