Description
The BSM100GB120DN2 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It features a high power rating and is designed for industrial applications requiring robust and efficient power switching. With its advanced semiconductor technology, the BSM100GB120DN2 offers reliable performance in demanding environments.
Specifications:
- Voltage Rating: 1200V
- Current Rating: 100A
- Module Type: Half-bridge, dual IGBT
- Package: SEMITOP package
- Features: High power density, low stray inductance, short circuit ruggedness
- Applications: Industrial drives, renewable energy systems, welding equipment, UPS (Uninterruptible Power Supplies), and other high-power applications.