Description
The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is made using high cell DMOS technology to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It offers stable, quick switching performance and is suitable for use in AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency, tiny servo motor control circuits, power MOSFET gate drivers, and other switching applications. The BS170N transistor has a drain to source voltage of 60V and a constant drain current of 500mA. It features a 2.5-ohm on-state resistance and can tolerate peak currents of up to 1200mA.
Features
- Fast Switching Speed
- High Input Impedance
- CMOS Logic Compatible Input
- No Thermal Runaway or Secondary Breakdown
- Voltage controlled small signal switch
- Drain-source voltage: max. 60V
- Gate-source voltage: max. 15V
- Drain current (DC): max. 500 mA
- High saturation current capability
- Operating temperature: -55°C to +150 °C
Specifications
| Transistor Polarity | N-Channel |
| Number of Channel | 1 |
| Drain Source Breakdown Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 500mA |
| Drain Source Resistance (Rds) | 5 ohm |
| Gate Source Voltage(Vgs) | 20V |
| Power Dissipation | 350mW |
| Package | TO-92 |
| Country of Origin | China |