Description
BDW93C is a Darlington complementary silicon power transistor. Due to their high DC gain, Darlington transistors are primarily used in switching and amplification applications. High and low side switches, sensor amplifiers, and audio amplifiers are a few of the essential uses. Photodarlingtons are used in applications that require light. The BDW93C is a monolithic Darlington silicon epitaxial-base NPN power transistor in a JEDEC TO-220 plastic container. It is intended to be used in switching and linear power applications.
Features
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Collector-Emitter Voltage VCEO Max: 100 V
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BDW93C NPN Power Darlington Transistor 100V 12A TO-220 Package
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Maximum DC Collector Current: 12 A
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Maximum Operating Temperature: +150°C
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Collector- Base Voltage VCBO: 100 V
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DC Collector/Base Gain h FE Min: 100
Specification
| Model | BDW93C |
| Type | Transistor |
| Package | JEDEC TO-220 |
| Collector current | 12A |
| Collector peak current | 15A |
| Base current | 0.2A |
| Total power dissipation | 80W |
| Operating and Storage Temperature Range | -65°C TO 150°C |
| Country of Origin | China |