Description
B688 Transistor is a High Power PNP Transistor, It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. It is a Triple diffused PNP transistor.
Specification
| Model | B688 |
| Brand | Korea |
| Collector-Base Voltage (VCBO) | -120V |
| Collector-Emitter Voltage (VCEO) | -120V |
| Emitter-Base voltage (VEBO) | -5V |
| Collector Current (IC) | -10A |
| Base Current (IB) | -1A |
| Collector Power Dissipation | 80W |
| Junction Temperature | 150 (Degree C) |
| Storage Temperature Range | -55~150 (Degree C) |
| Country of Origin | China |