7MBR30NF060-10 IGBT FUJI SEMI

The 7MBR30NF060-10 is an insulated-gate bipolar transistor (IGBT) module by Fuji Electric. It features a maximum voltage rating of 600V and a current rating of 30A. This module is designed for high efficiency and reliability in inverter and power conversion applications, with integrated protection and thermal management.

Specifications:

1. Collector-Emitter Voltage (Vce): 600V
2. Collector Current (Ic): 30A
3. Collector Power Dissipation (Pc): 120W
4. Gate-Emitter Voltage (Vge): ±20V
5. Saturation Voltage (Vce(sat)): 2.0V
6. Isolation Voltage (Viso): 2500V AC (1 minute)
7. Operating Junction Temperature (Tj): -40°C to +150°C
8. Storage Temperature (Tstg): -40°C to +125°C
9. Module Dimensions: 90mm x 55mm x 12mm
10. Package: PIM (Power Integrated Module) type