50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including automotive, DC/DC converters, and high-efficiency switching for power management in mobile and battery-powered goods.
Low gate charge ( typical 31 n C)
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
- Fast switching
- 175°C maximum junction temperature rating
- 100% avalanche tested
|Channel temperature||175-degree centigrade|