Description
The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a maximum operating temperature of -40°C. 5 volts is the threshold voltage. They are intended to be used in applications. Switched-mode power supplies, DC-to-DC converters, PWM motor controls, bridge circuits, and general-purpose switching applications are examples of such devices. These high-voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Specifications
| Model | 4N80K5 |
| Brand | STMicroelectronics |
| Type | MOSFET |
| Maximum Drain Current |Id| | 4A |
| Maximum Drain-Source Voltage |Vds| | 800V |
| Polarity Type | N-Channel |
| Mounting Type | Through Hole |
| Package | TO-220 |
| No. of Pins | 03 |
| Operation junction temperature | -55 to 150 ºC |
| Country of Origin | China |