33N60M2 60V N-Channel MOSFET

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Description

The MDmesh M2 technology was used to create these N-channel Power MOSFETs(33N60M2 ). These devices have low on-resistance and optimum switching properties because of their strip layout and an improved vertical structure, making them suited for the most demanding high-efficiency converters.

Datasheet 

Features

  • It's a Zener-protected device
  • It's used as a switching device
  • Its 100% avalanche tested
  • Its highly efficient
  • It's used in switching applications
  • It's used in Inverter
  • It's used in LLC converters and resonant converters.
  • It has low cost and a small size
Specifications:
Model 33N60M2 
Type MOSFET
Brand STMicroelectronic
Drain Current 104A
Insulation withstand voltage 2500V
Gate Source Voltage 25V
Total power dissipation 190W
Operating and Storage Temperature Range -55°C TO 150°C
Country of Origin China


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