Description
The 2MBI100VA-120-50 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Fuji Electric. It features a voltage rating of 1200V and a current rating of 100A, providing efficient switching performance. Commonly used in industrial applications, it offers robust reliability and compact design.
Specifications:
- Maximum Collector-Emitter Voltage (Vce): 1200V
- Maximum Continuous Collector Current (Ic): 100A
- Gate-Emitter Voltage (Vge): ±20V
- Maximum Junction Temperature (Tj): 150°C
- Collector Dissipation (Pc): 500W
- Short Circuit Withstand Time: 10µs
- Mounting Type: Screw
- Package Type: Module
- Typical Switching Speed: 0.5µs
- Isolation Voltage: 2500V AC (for 1 minute)
- Weight: Approximately 150g