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A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT being used is a TA49339 development type. The development type TA49372 diode is utilized in anti-parallel. It has designed by Fairchild. This IGBT is perfect for a variety of high voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget is designed to work with high frequency switch mode power supply.


  1. >100 kHz Operation 390 V, 20 A
  2. 200 kHz Operation 390 V, 12 A
  3. 600 V Switching SOA Capability
  4. Typical Fall Time 55 ns at TJ= 125°C
  5. Low Conduction Loss
  6. Its a lead free device


  • Fast switching operations
  • UPS
  • SMPS


1: Gate, 2: Collector, 3: Emitter

 Product 20N60A4D
 Brand Fairchild
Type Hyper fast diode
 Mounting Type Through hole
 Pins 3
Maximum operating voltage 600V
Power dissipation 260W
Maximum lead temperature 260°C
Fall time 55nS
Frequency 200KHz
Junction Temperature 125 Degree C
Country of Origin China

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