Description
The 200R04TV1 is an Insulated Gate Bipolar Transistor (IGBT) with a built-in diode. It features a 200A collector current, a 400V collector-emitter voltage, and low saturation voltage. Designed for efficient switching applications, it is commonly used in motor drives, inverters, and power supply circuits, ensuring high performance and reliability.
Specifications:
- Collector-Emitter Voltage (Vce): 400V
- Collector Current (Ic): 200A
- Gate-Emitter Voltage (Vge): ±20V
- Collector Dissipation (Pc): 830W
- Diode Forward Voltage (Vf): 1.25V
- Saturation Voltage (Vce(sat)): 1.8V (typical)
- Total Gate Charge (Qg): 600nC
- Turn-on Time (ton): 100ns
- Turn-off Time (toff): 300ns
- Operating Temperature Range: -55°C to 150°C
- Package Type: TO-247