Description
ST 130N10F3 is an N-Channel 100V, 120A Power MOSFET. These are N-channel enhancement mode Power MOSFETs manufactured with STMicroelectronics' STripFETTM III technology, which is specifically designed to reduce resistance and gate charge to provide superior switching performance. It is often used in high-current switching applications.
Features
- Ultra-low on-resistance
- 100% avalanche tested
Specifications
| Model | 130N10F3 |
| Brand | STMicroelectronics |
| Mounting Type | Through Hole |
| Polarity Transistor | N-Channel |
| Drain-Source Voltage (VDS) | 100V |
| Gate-Source Voltage (VGS) | ±30V |
| Continuous Drain-Current (ID) Tc=25°C | 120A |
| Continuous Drain-Current (ID) Tc=100°C | 78A |
| Pulsed Drain-Current (IDM) | 450A |
| Total Dissipation at Tc=25°C | 250W |
| Single Pulse Avalanche Energy (EAS) | 125mJ |
| Operating Junction and Storage temperature | -55~175°C |
| Package | TO-220 |
| Country of Origin | China |