Description
The Non-Punch Through (NPT) IGBT design is the HGTG11N120CND. This IGBT belongs to the family of MOS-gate high voltage switches. IGBTs combine the some elements ,bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49291 development type. The diode is a TA49189 development type. This MOSFET is ideal for many switching circuits, power supplies, power switching circuit, motor controls , AC and DC motor controls Etc.
Features
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43A, 1200V, TC = 25°C
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1200V Switching SOA Capability
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Typical fall time is 340nS
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Low conduction loss
- Junction temperature is 150°C
Specification
| Model | 11N120CND |
| Type | IGBT MOSFET |
| Package | TO-247 |
| Maximum lead temperature | 260°C |
| Collector to emitter voltage | 1200V |
| Current rise time | 16nS |
| Total power dissipation | 298W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |