The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is commonly used in electronic devices for switching and signal amplification. A MOSFET is a four-terminal device having source (S), gate (G), drain (D), and body (B). The body of the MOSFET is connected to the source terminal, resulting in a three-terminal device similar to a field-effect transistor. The voltage on an electrode called the gate, which is placed between the source and the drain, controls the width of the channel. There are two types of MOSFETs: N-type MOSFETs and P-type MOSFETs. In this blog, we will be discussing the different IRF Series MOSFET their applications, pinout, circuit, and the difference between them.
The IRF540 is an N-Channel power MOSFET. Its input impedance is much higher than that of a general transistor. When a signal is applied to the Gate terminal, the Drain and Source are connected. It has a wide range of real-world applications, including as high-speed switching drivers, switching regulators, relay drivers, switching converters, and motor drivers.
This MOSFET can support peak currents of up to 110A and can drive loads up to 23A. It also has a 4V threshold voltage, allowing it to be easily driven by low voltages like 5V. It is mostly used for logic switching with Arduino and other microcontrollers. Because of its good switching capabilities, this MOSFET may also be used to control the speed of motors and light dimmers. So, if you're searching for a MOSFET to switch applications that use a lot of current with some logic level devices, this MOSFET is a great option.
- It can be used as switching converters.
- We can use it as relay drivers.
- It can also be used as high speed switching drivers.
- We can use it as motor drivers.
- It can be used for fast switching and for amplification processes
The IRF520 is a N- Channel power MOSFET. This MOSFET has a low gate threshold voltage of 4V, it's widely used to switch large current loads with microcontrollers like Arduino. It is available in the TO-220 package and has three terminals: gate, source, and drain. IRF520 can be used in a wide range of circuits, including motor controller circuits, low-current UPS, and power supplies, as well as driving other high-power components like relays and transistors.
The Maximum drain current is 9.2A. The maximum voltage between the drain and the source is 100V. The voltage between the gate and the source should be less than 20V. This N-channel MOSFET has a low on-state resistance of around 0.27 ohm, which allows it to dissipate less energy as heat and hence increase the device's efficiency. The rise and fall times are 30ns and 20nS, respectively.
- DC to DC converters
- Applications that requires fast switching
- Uninterruptible power supplies
- Battery chargers
- Battery management system
- Solar Applications
- Motor Driver Circuits
- Computer & telecommunication applications
IRF9530 is a P-Channel Power MOSFET Transistor. The IRF9530 is packaged in a TO-220AB package. The dissipation power is 50 watts. IRF9530 is a three-terminal silicon device with a current conduction capability of -12A, fast switching speed. It also has a low on-state resistance and a -100V breakdown voltage. This power MOSFET device offers a wide range of applications in switching regulators, switching converters, motor drivers. At low voltages, this Power MOSFET Transistor has a fast switching speed and great efficiency. it is one of the most popular power semiconductor devices in the world due to its low gate drive power, fast switching speed, easy advanced paralleling capability, and wide bandwidth. It's suitable for a wide range of applications, including low-voltage (less than 200V) switches.
IRFZ44N is an N-channel MOSFET. When no voltage is provided to the gate terminal of N-Channel MOSFET, the Drain and Source pins are left open. These pins close when a gate voltage is applied.
IRFZ44N is a common MOSFET transistor that can be used in a wide range of general-purpose applications. The transistor has a high-speed switching capability, making it ideal for use in applications where high-speed switching is a crucial requirement. The transistor has a maximum load current of 49A and a maximum load voltage of 55V. Peak pulse currents of up to 160A. To get this transistor fully open, a minimum threshold voltage of 2V to 4V is necessary. This transistor can also be used as an audio amplifier with a maximum audio output of 94W. The IRFZ44N MOSFET has a low Rds value of 17.5 mΩ and a high drain current of 49A. The MOSFET also has a low threshold voltage of 4V. Hence it is commonly used with microcontrollers to drive with 5V.
- Battery Chargers
- Battery Management Systems
- Solar Battery Chargers & Applications
- Fast Switching Applications
- Uninterruptible Power Supplies
- Motor Driver Circuits
- Solar Uninterruptible Power Supplies
The IRFP460 is an N-channel MOSFET. At a 10V gate voltage, it is designed to have a high breakdown voltage of 500V and a low on-resistance of 0.27. This MOSFET is suitable for use in mains voltage switching converters, high voltage amplifiers, and motor drivers.
The MOSFET is a voltage-controlled device, which means that for it to switch on, a voltage must be present at the gate (with respect to the source). The IRFP460 has a gate threshold voltage of 2V to 4V, and it only just begins to conduct at this value. The gate voltage must be at minimum 10V. The gate voltage has a maximum limit of 20V, after which the gate can be damaged. In the low-side switching configuration, power MOSFETs like the IRFP460 are typically used to switch an inductive load at a frequency of 10kHz.
- DC-DC converters
- Motor drivers
- Power amplifiers
- Power switching
IRF630The IRF630 is a third-generation power MOSFET that was created with high-speed switching. The IRF630 is designed to sustain load voltages of up to 200 V and currents of up to 9 A. It can drive current up to 36 A for 30μs in pulse mode with a duty cycle of 2%. The drain gate voltage is 200V and the gate source voltage is 20V. The total power dissipation is 88W. This Power MOSFET is available in the TO-220 package.
The transistor can drive a load of up to 200V with up to 9A current in and up to 36A in pulse mode for a time period of 300uS or 300 microseconds with a duty cycle of 2%. T he transistor has a low on-state resistance between the drain and the source, resulting in low power loss.
|Type||N- Channel||N- Channel||N- Channel||N- Channel||N- Channel||P- Channel|
|Drain Source voltage||100V||100V||55V||500V||200V||-100V|
|Drain Gate voltage||100V||100V||55V||500V||200V||-100V|
|Gate Source voltage||20V||20V||20V||30V||20V||25V|
|Continuous Drain current||23A||10A||49A||20A||9A||-13A|
|Pulsed Drain Current||92A||40A||160A||80A||36A||-32A|
|Total gate Charge||65nC||25nC||62nC||190nC||39nC||38nC|
|Total power dissipation||100W||70W||110W||250W||88W||50W|
|Operating Temperature||175 Degree C||175 Degree C||175 Degree C||150 Degree C||175 Degree C||150 Degree C|