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IRF520 N-channel 100V 10A Mosfet

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Description-

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 9.2A
  • Drain to Source Breakdown Voltage: 100V
  • Drain Source Resistance (RDS) is 0.27 Ohms
  • The gate threshold voltage (VGS-th) is 4V (max)
  • It is commonly used with Arduino, due to its low threshold voltage
  • Datasheet Link- http://pdf.datasheetcatalog.com/datasheet/stmicroelectronics/3002.pdf.
  • Transistor | Power MOSFET | IRF520 MOSFET.