4N80K5 4A 800V N-Channel Power MOSFET

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Description

The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a maximum operating temperature of -40°C. 5 volts is the threshold voltage. They are intended to be used in applications. Switched-mode power supplies, DC-to-DC converters, PWM motor controls, bridge circuits, and general-purpose switching applications are examples of such devices. These high-voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

For more Information Datasheet

Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested 
  • Zener-protected
Specifications
 Model 4N80K5
 Brand STMicroelectronics
 Type MOSFET
 Maximum Drain Current |Id| 4A
 Maximum Drain-Source Voltage |Vds| 800V
 Polarity Type N-Channel
 Mounting Type Through Hole
 Package TO-220
 No. of Pins 03
 Operation junction temperature -55 to 150 ºC

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