30N60A4D N-Channel IGBT

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30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25oC and 150oC, the significantly smaller on-state voltage drop only varies somewhat. The IGBT used is of development type TA49343. The TA49373 development type diode is the one employed in anti-parallel.
This IGBT is perfect for many high-frequency, high-voltage switching applications where minimal conduction losses are crucial. For high frequency switch mode power supplies, this device has been designed.


  • Its frequency range is <100KHz
  • It operates on 390V 
  • Its  forward operating current is 30A at 100KHz frequency
  • Its operating voltage is 390V and the current is 18A at 200KHz frequency
  • Its typical fall time is 60nS
  • It has low conduction loss
Part number 30N60A4D 
Package TO-247
Brand Fairchild
Power dissipation 463W
Maximum temperature for soldering 260 degree centigrade
Diode forward voltage 2.5V
Country of Origin China

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