Description
30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25oC and 150oC, the significantly smaller on-state voltage drop only varies somewhat. The IGBT used is of development type TA49343. The TA49373 development type diode is the one employed in anti-parallel.
This IGBT is perfect for many high-frequency, high-voltage switching applications where minimal conduction losses are crucial. For high frequency switch mode power supplies, this device has been designed.
Features
- Its frequency range is <100KHz
- It operates on 390V
- Its forward operating current is 30A at 100KHz frequency
- Its operating voltage is 390V and the current is 18A at 200KHz frequency
- Its typical fall time is 60nS
- It has low conduction loss
Specification
| Part number | 30N60A4D |
| Type | IGBT |
| Package | TO-247 |
| Brand | Fairchild |
| Power dissipation | 463W |
| Maximum temperature for soldering | 260 degree centigrade |
| Diode forward voltage | 2.5V |
| Country of Origin | China |