Description
The 25N120 is a high voltage, high current IGBT that can switch up to 1200V and 50A. It is made using NPT (Non-Punch Through) trench technology, which results in very low switching loss and low saturation voltage, making it suitable for use in low voltage switching driver designs and achieving comparatively high efficiency for its switching range. It has a very low gate saturation gate voltage of 2V, making it suitable for use in the design of low voltage side drivers. This IGBT is ideal for resonant and soft-switching applications such as induction heating and Tesla coil, Induction heating, large Solenoids, Microwave Ovens, etc.
Specification
| Collector-Emitter Voltage | 1200V |
| Gate-Emitter Voltage | ±20V |
| Minimum Gate-Emitter threshold Voltage | 3.5V |
| Maximum Gate-Emitter threshold Voltage | 7.5V |
| Typical Gate-Emitter threshold Voltage | 5.5V |
| Collector to Emitter Saturation Voltage | 2V-2.65V( Varies with Temp. , Current and Voltage conditions) |
| Collector Current | 50A at 25°C, 25A at 50°C |
| Maximum Pulsed Collector Current | 90A |
| Diode Continuous Forward Current | 25A |
| Diode Maximum Forward Current | 150A |
| Collector Cut-Off Current | 3mA |
| Gate-Emitter Leakage Current | ±250nA |
| Rise Time | 60ns |
| Fall Time | 100ns |
| Size | 15.5mmx4.8mmx20mm |
| Country of Origin | China |